tll.440. vishay semiconductors 1 (7) rev. a2, 05-oct-00 www.vishay.com document number 83029 low current led in 3 mm tinted diffused package color type technology angle of half intensity high efficiency red tllr440. gaasp on gap 25 yellow tlly440. gaasp on gap 25 green tllg440. gap on gap 25 features low power consumption high brightness cmos/mos compatible specified at i f = 2 ma luminous intensity categorized yellow and green color categorized 94 8488 applications low power dc circuits absolute maximum ratings t amb = 25 c, unless otherwise specified tllr440. , tlly440. , tllg440. , parameter test conditions symbol value unit reverse voltage v r 6 v dc forward current i f 7 ma surge forward current t p 10 s i fsm 0.15 a power dissipation t amb 84 c p v 20 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 800 k/w
tll.440. vishay semiconductors 2 (7) rev. a2, 05-oct-00 www.vishay.com document number 83029 optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red ( tllr440. ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f =2ma tllr4400 i v 0.63 1.2 mcd luminous intensity 1) i f = 2 ma tllr4401 i v 1 2 mcd dominant wavelength i f = 2 ma d 612 625 nm peak wavelength i f = 2 ma p 635 nm angle of half intensity i f = 2 ma j + 25 deg forward voltage i f = 2 ma v f 1.9 2.4 v reverse voltage i r = 10 a v r 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 yellow ( tlly440. ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f =2ma tlly4400 i v 0.63 1.2 mcd luminous intensity 1) i f = 2 ma tlly4401 i v 1 2 mcd dominant wavelength i f = 2 ma d 581 594 nm peak wavelength i f = 2 ma p 585 nm angle of half intensity i f = 2 ma j + 25 deg forward voltage i f = 2 ma v f 2.4 2.9 v reverse voltage i r = 10 a v r 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5 green ( tllg440. ) parameter test conditions type symbol min typ max unit luminous intensity 1) i =2ma tllg4400 i v 0.63 1.2 mcd luminous intensity 1) i f = 2 ma tllg4401 i v 1 2 mcd dominant wavelength i f = 2 ma d 562 575 nm peak wavelength i f = 2 ma p 565 nm angle of half intensity i f = 2 ma j + 25 deg forward voltage i f = 2 ma v f 1.9 2.4 v reverse voltage i r = 10 a v r 6 20 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i v min./ i v max. 0.5
tll.440. vishay semiconductors 3 (7) rev. a2, 05-oct-00 www.vishay.com document number 83029 typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 5 10 15 20 25 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 95 10048 figure 1. power dissipation vs. ambient temperature 020406080 0 2 4 6 8 10 i forward current ( ma ) f t amb ambient temperature ( c ) 100 95 10049 figure 2. forward current vs. ambient temperature 0.4 0.2 0 0.2 0.4 0.6 95 10060 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i relative luminous intensity v rel figure 3. rel. luminous intensity vs. angular displacement 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 10050 i forward current ( ma ) f high efficiency red t p /t=0.001 t p =10 s figure 4. forward current vs. forward voltage 0 95 10051 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) high efficiency red i f =2ma 0 0.4 0.8 1.2 1.6 2.0 figure 5. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11490 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 high efficiency red figure 6. rel. lumin. intensity vs. forw. current/duty cycle
tll.440. vishay semiconductors 4 (7) rev. a2, 05-oct-00 www.vishay.com document number 83029 0.1 1 10 0.01 0.1 1 10 100 100 95 10061 i relative luminous intensity v rel i f forward current ( ma ) high efficiency red figure 7. relative luminous intensity vs. forward current 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 8. relative luminous intensity vs. wavelength 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 10053 i forward current ( ma ) f yellow t p /t=0.001 t p =10 s figure 9. forward current vs. forward voltage 0 0.4 0.8 1.2 1.6 2.0 0 95 10054 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) yellow figure 10. rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 9611590 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 yellow figure 11. rel. lumin. intensity vs. forw. current/duty cycle 0.1 1 10 0.01 0.1 1 10 100 100 95 10062 i relative luminous intensity v rel i f forward current ( ma ) yellow figure 12. relative luminous intensity vs. forward current
tll.440. vishay semiconductors 5 (7) rev. a2, 05-oct-00 www.vishay.com document number 83029 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 i relative luminous intensity v rel wavelength ( nm ) 1.0 yellow figure 13. relative luminous intensity vs. wavelength 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 10056 i forward current ( ma ) f green t p /t=0.001 t p =10 s figure 14. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10057 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) green i f =2ma figure 15. rel. luminous. intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11591 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 green figure 16. rel. lumin. intensity vs. forw. current/duty cycle 0.1 1 10 0.01 0.1 1 10 100 100 95 10059 i relative luminous intensity v rel i f forward current ( ma ) green figure 17. relative luminous intensity vs. forward current 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i relative luminous intensity v rel wavelength ( nm ) 1.0 green figure 18. relative luminous intensity vs. wavelength
tll.440. vishay semiconductors 6 (7) rev. a2, 05-oct-00 www.vishay.com document number 83029 dimensions in mm 95 10913
tll.440. vishay semiconductors 7 (7) rev. a2, 05-oct-00 www.vishay.com document number 83029 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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